? 2002 ixys all rights reserved hiperfast tm igbt with diode symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 14 a i c90 t c = 90c 7 a i cm t c = 25c, 1 ms 56 a ssoa v ge = 15 v, t vj = 125c, r g = 18 ? i cm = 14 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25c 80 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque, (to-220) m3 0.45/4 nm/lb.in. m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25c 100 a v ge = 0 v t j = 125c 750 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.8 2.0 v features ? international standard packages jedec to-263 surface mountable and jedec to-220 ab ? high current handling capability ? hiperfast tm hdmos tm process ? mos gate turn-on - drive simplicity applications ? uninterruptible power supplies (ups) ? switched-mode and resonant-mode power supplies ? ac motor speed control ? dc servo and robot drives ? dc choppers advantages ? high power density ? suitable for surface mounting v ces = 600 v i c25 = 14 a v ce(sat) = 2.0 v t fi = 150ns g = gate, c = collector, e = emitter, tab = collector advanced technical information g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) ds98977(12/02) ixga 7n60bd1 ixgp 7n60bd1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixga 7n60bd1 ixgp 7n60bd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 3 7 s pulse test, t 300 s, duty cycle 2 % c ies 500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 50 pf c res 17 pf q g 25 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 15 nc q gc 10 nc t d(on) 10 ns t ri 10 ns t d(off) 100 200 ns t fi 150 250 ns e off 0.3 0.6 mj t d(on) 10 ns t ri 15 ns e on 0.15 mj t d(off) 200 ns t fi 250 ns e off 0.6 mj r thjc igbt 1.56 k/w r thck 0.50 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g to-220 ab outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 1. gate 2. collector 3. emitter 4. collector botton side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 aa outline pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10a; t vj = 150 c 1.96 v t vj = 25 c 2.95 v i rm v r = 100 v; i f =25a; -di f /dt = 100 a/ s 2 2.5 v l < 0.05 h ; t vj = 100 c t rr i f = 1 a; -di/dt = 50 a/ s; v r = 30 v t j = 25 c35ns r thjc diode 1.6 k/w min. recommended footprint (dimensions in inches and mm)
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